The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias o f + 3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of Q (absolute value in Coulombs, rounded off to the nearest integer) is ____________.